Structural and binding properties of vacancy clusters in silicon

被引：59
|
作者：
Bongiorno, A
Colombo, L
De la Rubia, TD
机构：
[1] Univ Milan, Dipartimento Sci Mat, INFM, I-20126 Milan, Italy
[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
来源：
EUROPHYSICS LETTERS | 1998年 / 43卷 / 06期
关键词：
D O I：
10.1209/epl/i1998-00419-1
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
By means of large-scale quantum simulations we investigate the formation and binding of vacancy clusters V-n in silicon for n less than or equal to 35. We show that different growth patterns exist and that an interplay between energy and topology arguments determines the most stable aggregates.
引用
收藏
页码：695 / 700
页数：6
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