State-specific enhancement of Cl+ and Cl- desorption for SiCl4 adsorbed on a Si(100) surface following Cl 2p and Si 2p core-level excitations

被引:21
|
作者
Chen, JM [1 ]
Lu, KT [1 ]
机构
[1] Synchrotron Radiat Res Ctr, Hsinchu 30077, Taiwan
关键词
D O I
10.1103/PhysRevLett.86.3176
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
State-specific desorption for SiCl4 adsorbed on a Si(100) surface at similar to 90 K with variable coverage following the Cl 2p and Si 2p core-level excitations has been investigated using synchrotron radiation. The Cl+ yields show a significant enhancement following the Cl 2p --> 8a(1)* excitation. The Cl- yields are notably enhanced at the 8a(1)* resonance at both Cl 2p and Si 2p edges. The enhancement of the Cl yield occurs through the formation of highly excited states of the adsorbed molecules. These results provide some new dissociation processes from adsorbates on surfaces via core-level excitation.
引用
收藏
页码:3176 / 3179
页数:4
相关论文
共 50 条
  • [1] Dissociation dynamics of anionic and excited neutral fragments of gaseous SiCl4 following Cl 2p and Si 2p core-level excitations
    Chen, J. M.
    Lu, K. T.
    Lee, J. M.
    Chou, T. L.
    Chen, H. C.
    Chen, S. A.
    Haw, S. C.
    Chen, T. H.
    NEW JOURNAL OF PHYSICS, 2008, 10
  • [2] Dissociation dynamics of excited neutral fragments of gaseous SiCl4 following Si 2p and Cl 2p core-level excitations -: art. no. 032706
    Chen, JM
    Lu, KT
    Lee, JM
    Ho, SC
    Chang, HW
    PHYSICAL REVIEW A, 2005, 72 (03):
  • [3] SI 2P CORE-LEVEL EXCITATION IN CONDENSED SICL4
    ROSENBERG, RA
    FRIGO, SP
    CHEMICAL PHYSICS LETTERS, 1991, 184 (5-6) : 439 - 441
  • [5] State-specific desorption in condensed Si(CH3)2Cl2 following resonant excitation at the Cl 2p edge
    Chen, JM
    Lu, KT
    Liu, RG
    Lay, JW
    Liu, YC
    Chuang, TJ
    JOURNAL OF CHEMICAL PHYSICS, 1998, 108 (18): : 7849 - 7854
  • [6] Dissociation dynamics of positive-ion and negative-ion fragments of gaseous and condensed Si(CH3)2Cl2 via Si 2p, Cl 2p, and Cl 1s core-level excitations
    Chen, J. M.
    Lu, K. T.
    Lee, J. M.
    Chen, C. K.
    Haw, S. C.
    JOURNAL OF CHEMICAL PHYSICS, 2006, 125 (21):
  • [7] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES
    HIMPSEL, FJ
    HEIMANN, P
    CHIANG, TC
    EASTMAN, DE
    PHYSICAL REVIEW LETTERS, 1980, 45 (13) : 1112 - 1115
  • [8] Electronic relaxation and ion desorption processes of solid Si(CH3)(2)Cl-2 following Si 2p core-level excitation
    Chen, JM
    Lu, KT
    Liu, RG
    Lay, JW
    Liu, YC
    JOURNAL OF CHEMICAL PHYSICS, 1997, 106 (22): : 9105 - 9110
  • [9] Si 2p core-level shifts at the CdTe/Si(100) interface
    Sporken, R
    Malengreau, F
    Ghijsen, J
    Caudano, R
    Sivananthan, S
    Faurie, JP
    van Gemmeren, T
    Johnson, RL
    APPLIED SURFACE SCIENCE, 1998, 123 : 462 - 466
  • [10] Si 2p core-level shifts at the CdTe/Si(100) interface
    Sporken, R.
    Malengreau, F.
    Ghijsen, J.
    Caudano, R.
    Sivananthan, S.
    Faurie, J.P.
    van Gemmeren, T.
    Johnson, R.L.
    Applied Surface Science, 1998, 123-124 : 462 - 466