Temperature dependence of the photocurrent of GaAsN alloys

The temperature dependence of the photocurrent of GaAs1-xNx alloys was measured for different N compositions (0.0031 less than or equal to x less than or equal to 0.031). As the nitrogen composition in GaAs1-xNx increased, the photocurrent peak was clearly red shifted in comparison with that of GaAs, and a transition from the temperature dependence of GaAs band-like states to that, of more localized states was observed for higher nitrogen compositions, As the measurement temperature was increased, the photocurrent peak was clearly red shifted, and those read shifts were particularly notable for low nitrogen compositions. However, the shifts tended to saturate when the nitrogen composition become higher than 0.98 %. When the nitrogen composition was in the range of 1.68 similar to 3.11 %, the measured temperature dependence of the energy band gap was nicely fitted. However, the properties for the nitrogen composition range of 0.31 similar to 0.98 % could not be fitted with a single fitting model; however, the properties could be well reproduced by using the band anticrossing model.