Anisotropic enhancement of flux pinning in Y-Ba-Cu-O thin films by substrate mediated defect control

被引：2
|
作者：
Habermeier, HU
Haage, T
Zegenhagen, J
Warthmann, R
Jooss, C
机构：
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Max Planck Inst Met Forsch, D-70569 Stuttgart, Germany
来源：
SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 1998年 / 11卷 / 10期
关键词：
D O I：
10.1088/0953-2048/11/10/006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
YBa2Cu3O7-x, (YBCO) thin films have been grown on vicinal SrTiO3(001) single crystals. The films show a pronounced anisotropic resistivity and flux pinning properties in the substrate plane. UHV scanning tunnelling microscopy and transmission electron microscopy have been used to investigate the substrate surface, film morphology and the growth induced defect structure. The anisotropy is caused by planar defects generated via self-organization of the YBCO which lead to an exceptionally large critical current density up to 8 x 10(11) A m(-2) at 4.2 K. The results demonstrate the possibility of a controlled enhancement of the critical current by tailoring the growth induced defect structure.
引用
收藏
页码：929 / 934
页数：6
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