Anomalous Hall effect assisted by interfacial chemical reaction in perpendicular Co/Pt multilayers

被引：3
|
作者：
Liu, Qian [1 ]
Jiang, Shaolong [2 ]
Teng, Jiao [3 ]
机构：
[1] North China Univ Sci & Technol, Coll Met & Energy, Tangshan 063210, Peoples R China
[2] Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
[3] Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2018年 / 454卷
关键词：
Anomalous Hall effect; Co/Pt multilayers; Interfacial chemical reaction; BEHAVIOR;
D O I：
10.1016/j.jmmm.2018.01.098
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
To uncover the underlying mechanism of Mg effect on the improved anomalous Hall effect (AHE) of perpendicular [Pt/Co](3)/Mg/HfO2 multilayers, the X-ray photoelectron spectroscopy analysis has been carried out. It is found that Mg interlayer at the Co/HfO2 interface could prevent the Co oxidation to some extent via interfacial chemical reaction. As a result, A large anomalous Hall resistivity (qAH) is obtained in perpendicular [Pt/Co](3)/Mg/HfO2 multilayers, with a maximum qAH of 3.02 mu Omega cm, which is 59% larger than that in Co/Pt multilayers without Mg insertion. This effective modification of the AHE based on interfacial chemical reaction provides a promising pathway for spintronic applications. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码：264 / 266
页数：3
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