The change of photo-induced resistivity properties in La2/3Ca1/3MnO3 thin films

被引:12
|
作者
Wang, SL
Chen, CL [1 ]
Wang, YL
Jin, KX
Wang, YC
Ren, R
Song, ZM
Xiao, Y
机构
[1] Northwestern Polytech Univ, Dept Appl Phys, Xian 710072, Peoples R China
[2] Xi An Jiao Tong Univ, Sch Sci, Xian 710049, Peoples R China
[3] Huazhong Univ Sci & Technol, Wuhan 430074, Peoples R China
关键词
perovskite thin film; photoinduced; electron spin; small polaron;
D O I
10.7498/aps.53.587
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Photo-induced resistivity change p has been studied in perovskite manganite La2/3Ca1/3 MnO3 thin films with a continous wave laser and modulated laser pulses in this paper. Experimental results show that in the sample films, the maximum of photoinduced resistivity change(DeltaR/R)(max) can reach 43.5% which is a very exciting figure in this research field. Modulated laser pulse induced signal intensity has a highly nonlinear relation with the applied current and temperature. The maximum of photoinduced resistivity increase is a second power function of the applied current, while the temperature at which the maximum appears is proportional to the bias current. There exist an optimal bias current and a temperature for optical response in this film. These results are attributed to the optical excited e(g)down arrow carriers and polarons.
引用
收藏
页码:587 / 591
页数:5
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