Very low threshold operation of quantum cascade lasers

被引:5
|
作者
Yan Fang-Liang
Zhang Jin-Chuan [1 ]
Yao Dan-Yang
Liu Feng-Qi
Wang Li-Jun
Liu Jun-Qi
Wang Zhan-Guo
机构
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
基金
中国国家自然科学基金; 北京市自然科学基金;
关键词
semiconductor laser; quantum cascade lasers; threshold current density; HIGH-TEMPERATURE OPERATION; CONTINUOUS-WAVE OPERATION; BOUND-TO-CONTINUUM; MU-M; PERFORMANCE;
D O I
10.1088/1674-1056/24/2/024212
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A strain-compensated InP-based quantum cascade laser (QCL) structure emitting at 4.6 mu m is demonstrated, based on a two-phonon resonant design and grown by solid-source molecular beam epitaxy (MBE). By optimizing the growth parameters, a very high quality heterostructure with the lowest threshold current densities ever reported for QCLs was fabricated. Threshold current densities as low as 0.47 kA/cm(2) in pulsed operation and 0.56 kA/cm(2) in continuous-wave (cw) operation at 293 K were achieved for this state-of-the-art QCL. A minimum power consumption of 3.65 W was measured for the QCL, uncooled, with a high-reflectivity (HR) coating on its rear facet.
引用
收藏
页数:4
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