Identification of Photoluminescence Centers in Oxygen- and Erbium-Doped a-Si(H) Films

被引：0
|
作者：
Bordovskii, G. A. [1 ]
Dashina, A. Yu. [1 ]
Naletko, A. S. [1 ]
Marchenko, A. V. [1 ]
Seregin, P. P. [1 ]
Terukov, E. I. [2 ]
机构：
[1] Herzen Russian State Pedag Univ, St Petersburg 191186, Russia
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
GLASS PHYSICS AND CHEMISTRY | 2011年 / 37卷 / 04期
关键词：
amorphous hydrogenated silicon; photoluminescence; Mossbauer spectroscopy;
D O I：
10.1134/S1087659611040031
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
It has been shown that [Er-O] clusters play the role of photoluminescence centers in films of amorphous hydrogenated silicon a-Si(H) doped with oxygen and erbium. The local symmetry of Er(3+) ions in clusters is the same as that in Er(2)O(3). A decrease in the cluster size and an increase in the particle density result in the enhancement of the photoluminescence intensity of a-Si(H) : Er at a wavelength of 1.54 mu m.
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收藏
页码：406 / 410
页数：5
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