Advances in etching high-density embedded FRAM structures

The development of ferroelectric random access memories (FRAM) has been a sustained endeavor among semiconductor manufacturers over the past decade in response to the growing communications and consumer electronics demand for nonvolatile memories capable of high-speed/low-voltage operation. Process technology and materials performance improvements have refined cell structure, device density, operating voltage, endurance, and data retention. Similarly, advances are being made in etch technology to enable the patterning of true high-density, electrically sound FRAM capacitor arrays. This paper addresses enhancements in chamber design and etch chemistry that have significantly improved electrical performance of the capacitors and achieved sustained stability of the etch process.