Annealing of the Raman defect peaks in He-implanted UO2

被引：10

作者：

Desgranges, Lionel ^{[1
]}

Canizares, Aurelien ^{[2
]}

Simon, Patrick ^{[2
]}

机构：

[1] Cadarache, DEC, IRESNE, CEA,DES, F-13108 St Paul Les Durance, France

[2] CNRS, UPR3079, CEMHTI, CS 90055,1D Ave Rech Sci, F-45071 Orleans 2, France

来源：

JOURNAL OF NUCLEAR MATERIALS | 2022年 / 559卷

关键词：

UO2; Raman spectroscopy; Implantation; Defects; Defect annealing; THERMAL EVOLUTION; SPECTROSCOPY; IRRADIATIONS; FUEL;

D O I：

10.1016/j.jnucmat.2021.153405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The exploitation of the data acquired by Raman spectroscopy on UO2 related materials requires the understanding of the so-called defect peaks. To do so, we measured the Raman spectrum of a He-implanted UO2 sample as a function of temperature. Two annealing steps are evidenced that correspond to known annealing temperatures reported in literature. These results are discussed in order to identify what defect could be at the origin of the Raman defect peaks. (C) 2021 Elsevier B.V. All rights reserved.

引用

页数：6

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