Room Temperature and High Responsivity Short Wavelength II-VI Quantum Well Infrared Photodetector

被引：0

作者：

Ravikumar, Arvind P. ^{[1
]}

Chen, Guopeng ^{[2
]}

Zhao, Kuaile ^{[2
]}

Tian, Yue ^{[1
]}

Prucnal, Paul ^{[1
]}

Tamargo, Maria C. ^{[3
]}

Gmachl, Claire F. ^{[1
]}

Shen, Aidong ^{[2
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA

[3] CUNY City Coll, Dept Chem, New York, NY 10031 USA

来源：

2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We experimentally demonstrate a short wavelength ZnCdSe/ZnCdMgSe quantum well infrared photodetector (QWIP) with a room temperature responsivity of over 30 A/W. The dark-current limited detectivity at 80 K was measured to be 2x10(9) cm root Hz/W.

引用

页数：2

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