Ultra high power light-emitting diodes with electroplating technology

Heat dissipation and thermal management of devices package are now a critical problem for applications of high power light emitting diodes (LEDs). In this paper, a novel package method with copper electroplating on the red, green, and blue LED chips were performed. With the copper plating layer, the endurable injection current of these LED chips can be increased easily from typical value of 350 mA to more than 1680 mA in room temperature; especially the input power of the GaN-based single chip blue LED can be increased up to 12W. The relative luminous intensity at 350 mA of the novel red, green, and blue LEDs (RGB LEDs) have 53%, 69%, and 23% enhancement respectively compared with those of the conventional packaged LEDs. When the injection current of these LED chips were increased to 850 mA, the relative luminous intensity of the novel RGB LEDs chips have 431% and 83%, and 18% enhancement respectively compared with those of the conventional packaged ones.