A D-Band Power Amplifier with 12dBm P1dB, 10% Power Added Efficiency in InP-DHBT Technology

被引：0
|
作者：
Hossain, M. [1 ]
Shivan, T. [1 ]
Doerner, R. [1 ]
Seifert, S. [1 ]
Yacoub, H. [1 ]
Johansen, T. K. [2 ]
Heinrich, W. [1 ]
Krozer, V [1 ]
机构：
[1] Leibniz Inst Hochstfrequenztech FBH, Ferdinand Braun Inst, Berlin, Germany
[2] Tech Univ Denmark DTU, Lyngby, Denmark
来源：
2021 16TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2021) | 2021年
基金：
欧盟地平线“2020”;
关键词：
InP double heterojunction bipolar transistor (DHBT); monolithic microwave integrated circuit (MMIC); power amplifier (PA); transferred-substrate process (TS); OUTPUT POWER; GHZ; GAIN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a D-band power amplifier (PA) using 800 nm InP-DHBT technology. It consists of a driver stage with a 2-way combined cascade unit power cell. Measurements show 12 dB small signal gain. The output 1-dB compression point (OP1dB) and the saturated output power (Psat) occur around 12 dBm and 14 dBm, respectively. The maximum dc power consumption is 212 mW and results in a power-added efficiency (PAE) of up to 10% at 145 GHz. The chip area is only 1.5x1.2 mm(2). This amplifier demonstrates very similar Psat, OP1dB, and PAE values as compared to 250 nm InP-DHBT technologies.
引用
收藏
页码：237 / 240
页数：4
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