Statistical Learning of IC Models for System-Level ESD Simulation

被引:4
|
作者
Xiong, Jie [1 ]
Chen, Zaichen [2 ]
Raginsky, Maxim [1 ]
Rosenbaum, Elyse [1 ]
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Champaign, IL 61820 USA
[2] Texas Instruments Inc, Dallas, TX 75266 USA
关键词
Integrated circuit modeling; Pins; Kernel; Electrostatic discharges; Mathematical model; Computational modeling; Analytical models; Electrostatic discharge (ESD); integrated circuit (IC) modeling; kernel regression; recurrent neural network (RNN);
D O I
10.1109/TEMC.2021.3076492
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To enable accurate system-level electrostatic discharge (ESD) simulation, this article applies statistical learning to obtain I/O port models of the victim integrated circuits (ICs). A quasi-static I-V model derived using kernel regression can capture the circuit board dependency of the behavior observed at the I/O pin, regardless if there is snapback. The non-parametric kernel model can be reduced to a system-specific parametric model, which has smaller requirements for computing time and memory. In some cases, transient system-level ESD simulation may require the IC model to replicate the dynamic behavior of the nonlinear circuit. A recurrent neural network is demonstrated to be a suitable model in such cases. This article provides a detailed RNN training flow for IC pin modeling, and presents a Verilog-A implementation of the RNN for use with Simulation Program with Integrated Circuit Emphasis (SPICE)-type simulators.
引用
收藏
页码:1302 / 1311
页数:10
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