Excited electron dynamics of bismuth film grown on Si(111) surface by interferometric time-resolved two-photon photoemission spectroscopy

被引：1

作者：

Fujimasa, Shuji ^{[1
]}

Imamura, Masaki ^{[2
]}

Yasuda, Hidehiro ^{[3
]}

机构：

[1] Kobe Univ, Dept Mech Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

[2] Saga Univ, Synchrotron Light Applicat Ctr, Saga 8408502, Japan

[3] Osaka Univ, Res Ctr Ultrahigh Voltage Electron Microscopy, Osaka 5670047, Japan

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2011年 / 184卷 / 3-6期

关键词：

Excited electron dynamics; Time-resolved two-photon photoemission spectroscopy; Bismuth; BI; SB;

D O I：

10.1016/j.elspec.2011.01.005

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

We have carried out studies on the excited-electron dynamics in the single and poly crystalline Bi films by interferometric time-resolved two-photon photoemission spectroscopy (ITR-2PPE). The fast energy relaxation times of the excited electrons due to the electron-electron scattering were observed. The energy relaxation times were less than 15 fs and those of the single crystalline film are faster than those of the polycrystalline film. The faster energy relaxation times of the single crystalline Bi film are attributed to the higher scattering rate induced by the higher densities of states by appearance of the surface states in the vicinity of the Fermi level. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：309 / 312

页数：4

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