Effects of hydrostatic pressure on the donor binding energy and intro donor transition matrix elements in GaAS-GaAlAs quantum wells

被引：11

作者：

Panahi, H. ^{[1
,2
]}

Maleki, M. ^{[1
]}

机构：

[1] Univ Guilan, Dept Phys, Rasht 413351914, Iran

[2] Inst Studies Theoret Phys & Math, Tehran 193951795, Iran

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2008年 / 245卷 / 05期

关键词：

D O I：

10.1002/pssb.200743354

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects of hydrostatic pressure on the donor binding energy in GaAs-Ga0.7Al0.3As quantum wells have been studied in the effective mass approximation; using a variational approach for hydrogenic ground state is and excited states 2s, 2p(x), 3p(x). Results obtained show that the donor binding energy variation with the well width and the position of impurity under pressure is similar to that without pressure. The intro donor squared transition matrix elements are calculated as functions of impurity position in the presence of hydrostatic pressure. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：967 / 972

页数：6

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