Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax>200 GHz and low operating bias

被引：9

作者：

Koester, SJ ^{[1
]}

Saenger, KL ^{[1
]}

Chu, JO ^{[1
]}

Ouyang, QC ^{[1
]}

Ott, JA ^{[1
]}

Jenkins, KA ^{[1
]}

Canaperi, DF ^{[1
]}

Tornello, JA ^{[1
]}

Jahnes, CV ^{[1
]}

Steen, SE ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 03期

关键词：

high mobility; MODFET; silicon germanium;

D O I：

10.1109/LED.2005.843222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the dc and RF characterization of laterally scaled, Si-SiGe n-MODFETs. Devices with gate length, L-g, of 80 rum had f(T) = 79 GHz and f(max) = 212 GHz, while devices with L-g = 70 nm had f(T) as high as 92 GHz. The MODFETs displayed enhanced fT at reduced drain-to-source voltage, V-ds, Compared to Si MOSFETs with similar fT at high V-ds.

引用

页码：178 / 180

页数：3

共 5 条

[1] 0.3 dB minimum noise figure at 2.5 GHz of 0.13 μm Si/Si0.58Ge0.42 n-MODFETs
Enciso, M
Aniel, F
Crozat, P
Adde, R
Zeuner, M
Fox, A
Hackbarth, T
ELECTRONICS LETTERS, 2001, 37 (17) : 1089 - 1090
[2] 80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax
Koester, SJ
Saenger, KL
Chu, JO
Ouyang, QC
Ott, JA
Rooks, MJ
Canaperi, DF
Tornello, JA
Jahnes, C
Steen, SE
ELECTRONICS LETTERS, 2003, 39 (23) : 1684 - 1685
[3] Low-Power Efficient p+ Si0.7Ge0.3 Pocket Junctionless SGTFET with Varying Operating Conditions
Suman Lata Tripathi
Sanjeet Kumar Sinha
Govind Singh Patel
Journal of Electronic Materials, 2020, 49 : 4291 - 4299
[4] Low-Power Efficient p+ Si0.7Ge0.3 Pocket Junctionless SGTFET with Varying Operating Conditions
Tripathi, Suman Lata
Sinha, Sanjeet Kumar
Patel, Govind Singh
JOURNAL OF ELECTRONIC MATERIALS, 2020, 49 (07) : 4291 - 4299
[5] Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3
Wolf, Steven
Edmonds, Mary
Sardashti, Kasra
Clemons, Max
Park, Jun Hong
Yoshida, Naomi
Dong, Lin
Nemani, Srinivas
Yieh, Ellie
Holmes, Russell
Alvarez, Daniel
Kummel, Andrew C.
APPLIED SURFACE SCIENCE, 2018, 439 : 689 - 696

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Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax&gt;200 GHz and low operating bias

Laterally scaled Si-Si0.7Ge0.3 n-MODFETs with fmax>200 GHz and low operating bias