The optimum sintering condition for KSrPO4:Eu3+ phosphors applied in WLEDs

This paper investigates the influence of various sintering temperatures on the microstructure and photoluminescence properties of KSr0.99PO4:Eu-0.01(3+) phosphors prepared by microwave-assisted sintering. The package properties of KSr0.99PO4:Eu-0.01(3+) phosphors combined with a n-UV InGaN chip are also investigated. To achieve maximum luminescence, the optimum sintering temperature for KSr0.99PO4:Eu-0.01(3+) phosphors prepared by microwave assisted-sintering is 1200 degrees C due to the pure phase and uniform and large particles (as identified by XRD and SEM). The results of the package properties showed that KSr1-xPO4:xEu(3+) (x = 0.01) phosphor sintered at 1200 degrees C by microwave-assisted sintering could emit orange-red light via the n-UV InGaN chip.