Effect of zirconium addition on formation of CoSi2 thin films

被引:0
|
作者
Cheng, FX [1 ]
Jiang, CH [1 ]
Dong, XP [1 ]
Wu, HF [1 ]
Wu, JS [1 ]
机构
[1] Shanghai Jiao Tong Univ, Key lab High Temp Mat & Tests, Minist Educ, Sch Mat Sci & Engn, Shanghai 200030, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1007/s10853-005-1361-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
CoSi2 thin films were prepared by annealing the amorphous Co-Si thin films. Zr was added into the amorphous thin film in order to investigate its effect on formation of CoSi2 thin film. It was found that Zr increased the crystallization nucleation barrier and accelerated the complete transformation of CoSi to CoSi2. (c) 2005 Springer Science+ Business Media, Inc.
引用
收藏
页码:5655 / 5658
页数:4
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