The use of x-ray topography to map mechanical, thermomechanical and wire-bond strain fields in packaged integrated circuits

被引：0

作者：

McNally, PJ ^{[1
]}

Rantamaki, R ^{[1
]}

Curley, JW ^{[1
]}

Tuomi, T ^{[1
]}

Danilewsky, AN ^{[1
]}

Herbert, PAF ^{[1
]}

机构：

[1] Dublin City Univ, Microelect Res Lab, Dublin 9, Ireland

来源：

THIN-FILMS - STRESSES AND MECHANICAL PROPERTIES VII | 1998年 / 505卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermal processing steps in the production of packaged integrated circuits can lead to thermomechanical stresses. Additionally, the process of bonding wires co contact pads can lead to strain fields attributable to these. Synchrotron x-ray topography has been applied to packaged EEPROM Si ICs in order to produce maps of the strain fields induced by such processing steps. This technique allows for depth-resolved mapping with resolutions currently in the region of 5-10 mu m throughout the entire mapping volume.

引用

页码：241 / 247

页数：3

共 11 条

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McNally, PJ
Rantamäki, R
Tuomi, T
Danilewsky, AN
Lowney, D
Curley, JW
Herbert, PAF
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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (3-4): : 383 - 387

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