Efficient two-photon absorption of bulk GaN in the near-infrared region

被引：0
|
作者：
Toda, Y [1 ]
Matsubara, T [1 ]
Morita, R [1 ]
Hoshino, K [1 ]
Someya, T [1 ]
Arakawa, Y [1 ]
机构：
[1] Hokkaido Univ, Dept Appl Phys, Kita Ku, Sapporo, Hokkaido, Japan
来源：
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期
关键词：
D O I：
10.1002/pssc.200303480
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Transient transmission changes in the yellow luminescence (YL) band of GaN were investigated using excitation far smaller than the bandgap. At lower excitation power, time-resolved measurements revealed efficient transmission changes due to two-photon absorption (TPA), whose spectrum clearly indicates the contribution of the YL band. Upon increasing the excitation power, the transient signal showed an additional offset signal. The excitation power dependences of the offset suggested a two-step absorption process in conjunction with TPA in the YL band. The excitation energy dependence also supported this conclusion. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2627 / 2630
页数：4
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