Numerical Modeling of Silicon Processing Technology in CF4/H2 plasma

被引：0

作者：

Gorobchuk, Aleksey ^{[1
,2
]}

机构：

[1] ICT SB RAS, Lab Anal & Optimizat Nonlinear Syst, Novosibirsk, Russia

[2] Novosibirsk State Univ, Dept Mech & Math, Novosibirsk, Russia

来源：

2015 INTERNATIONAL SIBERIAN CONFERENCE ON CONTROL AND COMMUNICATIONS (SIBCON) | 2015年

关键词：

plasma-chemical etching technology; multicomponent gas mixtures;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

In the frame of hydrodynamical approach a technology of plasma-chemical etching silicon in CF4/H-2 plasma was simulated. The model of plasma-chemical kinetics contained 28 gas-phase reactions including the components F, F-2, CF2, CF3, CF4, C2F6, H, H-2, HF, CHF3, CH2F2. In the etching process a most part of fluorine goes on formation of component HF, that essentially reduces the etching rate of silicon. On the wafer surface it is formed the adsorption layer CF2, which at 40 % H-2 completely covers a silicon surface and stops the etching process.

引用

页数：4

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