Improvement of Scintillation Properties in Pr Doped Lu3Al5O12 Scintillator by Ga and Y Substitutions

被引：8

作者：

Kamada, Kei ^{[1
]}

Yanagida, Takayuki ^{[2
]}

Pejchal, Jan ^{[3
]}

Nikl, Martin ^{[3
]}

Endo, Takanori ^{[1
]}

Tsutumi, Kousuke ^{[1
]}

Fujimoto, Yutaka ^{[2
]}

Fukabori, Akihiro ^{[2
]}

Yoshikawa, Akira ^{[2
]}

机构：

[1] Furukawa Co Ltd, Mat Res Lab, Tsukuba, Ibaraki 3050856, Japan

[2] Tohoku Univ, IMR, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] AS CR, Inst Phys, Prague 16253, Czech Republic

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2012年 / 59卷 / 05期

关键词：

Oxides; scintillator materials; scintillators; single crystal growth; LUMINESCENCE; GROWTH; DEFECTS; ENERGY;

D O I：

10.1109/TNS.2012.2191621

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pr : (Lu, Y)(3)(Ga, Al)(5)O-12 single crystals were grown by the micro-pulling down (mu-PD) method. Luminescence and scintillation properties were measured. The substitution phenomenon in the Lu3+ sites with Y3+ and Al3+ sites with Ga3+ in garnet structure has been studied. Pr3+ 5d-4f emission within 300-400 nm accompanied by weak Pr3+ 4f-4f emission in 480-650 nm were observed in Ga 0-60 at.% substituted samples. Only Pr3+ 4f-4f emission was observed in Ga 80 at.% substituted sample. The light yield of Pr1% : Lu2Y1Ga2Al2O12 sample was almost the same as that of Cz grown Pr:LuAG standard. Two-component scintillation decay of 17.9 ns (93%) and 68.0 ns (7%) were obtained using the PMT and digital oscilloscope TDS5032B. Slower decay components were reduced by Ga and Y substitution in LuAG structure.

引用

页码：2130 / 2134

页数：5

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