Silicon Substrate Low-Temperature-Grown GaAs Terahertz Photomixers

被引：0

作者：

Beck, Alexandre ^{[1
]}

Blary, Karine ^{[1
]}

Peytavit, Emilien ^{[1
]}

Akalin, Tahsin ^{[1
]}

Lampin, Jean-Francois ^{[1
]}

Yang, Chun ^{[2
]}

Hindle, Francis ^{[2
]}

Mouret, Gael ^{[2
]}

机构：

[1] Univ Lille 1, Inst Elect Microelect & Nanotechnol, UMR CNRS 8520, Ave Poincare,BP 60069, F-59652 Villeneuve Dascq, France

[2] Univ Littoral Cote dOpale, Lab Phys Chimie 1 Atmosphere, CNRS, UMR 8101, F-59140 Dunkerque, France

来源：

2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2 | 2009年

关键词：

GENERATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed an epitaxial layer transfer technique for THz devices. Here we report the fabrication and the characterization of a THz photomixer on a silicon substrate. The active part of the photomixer is a low-temperature-grown GaAs mesa which has been transferred and layer bonded onto a Si substrate. The preliminary measurement of the THz signal generated in a photomixing configuration at 0.78 mu m shows that the overall performance is comparable to standard GaAs substrate photomixers at frequencies up to 2 THz.

引用

页码：457 / +

页数：2

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