Extrinsic anomalous Hall effect in epitaxial Mn4N films

Anomalous Hall effect (AHE) in ferrimagnetic Mn4N epitaxial films grown by molecular-beam epitaxy is investigated. The longitudinal conductivity sigma(xx) is within the superclean regime, indicating Mn4N is a highly conducting material. We further demonstrate that the AHE signal in 40-nmthick films is mainly due to the extrinsic contributions based on the analysis fitted by rho(AH) = a'rho(xx0) +b rho(2)(xx) and sigma(AH) proportional to sigma(xx). Our study not only provide a strategy for further theoretical work on antiperovskite manganese nitrides but also shed promising light on utilizing their extrinsic AHE to fabricate spintronic devices. (C) 2015 AIP Publishing LLC.