2W reliable operation in 50 μm-wide InGaAsP/InGaP/AlGaAs (λ=810 nm) SQW diode lasers with tensile-strained InGaP barriers

被引：5

作者：

Yamanaka, F ^{[1
]}

Wada, M ^{[1
]}

Kuniyasu, T ^{[1
]}

Ohgoh, T ^{[1
]}

Fukunaga, T ^{[1
]}

Hayakawa, T ^{[1
]}

机构：

[1] Fuji Photo Film Co Ltd, Miyanodai Technol Dev Ctr, Kanagawa 2588538, Japan

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 21期

关键词：

D O I：

10.1049/el:20010869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new InGaAsP/InGaP/AlGaAs (lambda = 810 nm) laser with tensile-strained InGaP barriers, broad waveguide structure and current blocking region near the facet is reported. 2 W continuous wave operation over 2000 h from a 50 mum aperture was achieved.

引用

页码：1289 / 1290

页数：2

共 7 条

[1] High-power 0.8 μm InGaAsP/InGaP/AlGaAs single quantum well lasers with tensile-strained InGaP barriers
Fukunaga, T
Wada, M
Hayakawa, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (4A): : L387 - L389
[2] HIGH-POWER HIGHLY-RELIABLE OPERATION OF 0.98-MU-M INGAAS-INGAP STRAIN-COMPENSATED SINGLE-QUANTUM-WELL LASERS WITH TENSILE-STRAINED INGAASP BARRIERS
SAGAWA, M
TOYONAKA, T
HIRAMOTO, K
SHINODA, K
UOMI, K
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) : 189 - 195
[3] HIGHLY RELIABLE OPERATION OF STRAIN-COMPENSATED 0.98-MU-M INGAAS/INGAP/GAAS LASERS WITH INGAASP STRAINED BARRIERS FOR EDFAS
TOYONAKA, T
SAGAWA, M
HIRAMOTO, K
SHINODA, K
UOMI, K
OHISHI, A
ELECTRONICS LETTERS, 1995, 31 (03) : 198 - 199
[4] Highly reliable operation of high-power InGaAsP/InGaP/AlGaAs 0.8 μm separate confinement heterostructure lasers
Fukunaga, Toshiaki
Wada, Mitsugu
Asano, Hideki
Hayakawa, Toshiro
Japanese Journal of Applied Physics, Part 2: Letters, 1995, 34 (9 B):
[5] HIGHLY RELIABLE OPERATION OF HIGH-POWER INGAASP/INGAP/ALGAAS 0.8 MU-M SEPARATE-CONFINEMENT HETEROSTRUCTURE LASERS
FUKUNAGA, T
WADA, M
ASANO, P
HAYAKAWA, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9B): : L1175 - L1177
[6] 7W CW power from tensile-strained GaAsyP1-y/AlGaAs (λ = 735 nm) QW diode lasers
Knauer, A
Erbert, G
Wenzel, H
Bhattacharya, A
Bugge, F
Maege, J
Pittroff, W
Sebastian, J
ELECTRONICS LETTERS, 1999, 35 (08) : 638 - 639
[7] Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1,2-W continuous-wave operation at 735 nm
Sumpf, B
Beister, G
Erbert, G
Fricke, J
Knauer, A
Pittroff, W
Ressel, P
Sebastian, J
Wenzel, H
Tränkle, G
IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (01) : 7 - 9

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