Diffuse X-ray scattering from misfit and threading dislocations in relaxed epitaxial layers

被引：2

作者：

Danis, S ^{[1
]}

Holy, V ^{[1
]}

机构：

[1] Charles Univ Prague, Dept Phys & Elect Struct, CR-12116 Prague, Czech Republic

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2005年 / 401卷 / 1-2期

关键词：

semiconductors thin film; dislocation; diffuse x-ray scattering;

D O I：

10.1016/j.jallcom.2005.01.056

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A statistical theory of X-ray scattering from dislocations oriented parallel or perpendicular to the surface in semiconductor thin film is presented. We apply this theory to two particular cases. At first, we derive formulae for diffusively scattered X-ray intensity from screw threading dislocations in GaN thin film in high-density approximation. Correlation in dislocation positions is involved in calculations. Diffuse X-ray scattering is calculated in case of PbTe thin films with various thicknesses in the second case. From the fit, the dislocation density was determined. (c) 2005 Published by Elsevier B.V.

引用

页码：217 / 220

页数：4

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