Effect of Ionizing Radiation on Defects and 1/f Noise in Ge pMOSFETs

被引：12

作者：

Zhang, Cher Xuan ^{[1
]}

Francis, Sarah Ashley ^{[1
]}

Zhang, En Xia ^{[1
]}

Fleetwood, Daniel M. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Galloway, Kenneth F. ^{[1
]}

Simoen, Eddy ^{[2
]}

Mitard, Jerome ^{[2
]}

Claeys, Cor ^{[2
]}

机构：

[1] Vanderbilt Univ, Elect Engn & Comp Sci Dept, Nashville, TN 37235 USA

[2] IMEC, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 03期

关键词：

1/f noise; border traps; germanium; total ionizing dose; LOW-FREQUENCY NOISE; OXIDE-SEMICONDUCTOR TRANSISTORS; THERMALLY STIMULATED CURRENT; INDUCED LEAKAGE CURRENT; MOS DEVICES; GATE STACK; CHANNEL MOSFETS; INTERFACE-TRAP; N-CHANNEL; DIELECTRICS;

D O I：

10.1109/TNS.2011.2128347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The irradiation and annealing responses of Ge pMOSFETs have been investigated under transmission gate bias. Both the radiation-induced charge trapping and the low frequency (1/f) noise increase with total ionizing dose and decrease with annealing time. The smallest increases in noise after irradiation are observed for Ge pMOSFETs with the lowest halo implantation doses. The smallest increases in oxide and interface trap charge densities are obtained for devices with eight monolayers of Si at the interface, as compared to devices with five Si monolayers.

引用

页码：764 / 769

页数：6

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