High-power and high-speed organic three-dimensional transistors with submicrometer channels

Three-dimensional organic field-effect transistors with high current density and high switching speed are developed with multiple submicrometer channels arranged perpendicularly to substrates. The short channel length is defined by the height of a multicolumnar structure without an electron-beam-lithography process. For devices using dinaphtho[2,3-b:2('),3(')-f]thieno[3,2-b]thiophene, extremely high current density exceeding 10 A/cm(2) and fast switching within 0.2 mu s are realized with an on-off ratio of 10(5). The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized with organic semiconductors. (c) 2010 American Institute of Physics. [doi: 10.1063/1.3458867]