A novel violet and blue enhanced SINP silicon photovoltaic device

被引：0
|
作者：
He, Bo [1 ]
Zhong, QuanMa [1 ]
Xu, Jing [2 ]
Zhao, Lei [1 ]
Li, Feng [1 ]
Shen, Cheng [1 ]
Zhang, NanSheng [1 ]
Yu, ZhengShan [1 ]
Yin, YanTing [1 ]
机构：
[1] Shanghai Univ, Dept Phys, SHU Solar E PV Lab, Shanghai 200444, Peoples R China
[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synthesis & Proc, Wuhan 430070, Peoples R China
来源：
2009 SYMPOSIUM ON PHOTONICS AND OPTOELECTRONICS (SOPO 2009) | 2009年
关键词：
ITO; SINP photovoltaic device; current-voltage(I-V) characteristics; spectral response; responsivity;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel ITO/SiO2/np Silicon SINP violet and blue enhanced photovoltaic device has been fabricated by thermal diffusion of phosphorus for shallow junction to enhance the spectral responsivity within the wavelength range of 400-600nm, low temperature thermally grown an ultrathin silicon dioxide and RF sputtering ITO antireflection coating to reduce the reflected light and enhance the sensitivity. The current-voltage (I-V) characteristics, spectral response and responsivity of high quantum efficiency of violet SINP photovoltaic device and deep junction SINP photovoltaic device were calculated and analyzed in detail.
引用
收藏
页码：893 / +
页数：2
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