The origin of 505 nm-peaked photoluminescence from Ba3MgSi2O8: Eu2+, Mn2+ phosphor for white-light-emitting diodes

被引：34
|
作者：
Ma, Liang [1 ,3 ]
Wang, Da-Jian [1 ,3 ]
Zhang, Hong-Mei [1 ,3 ]
Gu, Tie-Cheng [1 ,3 ]
Yuan, Zhi-Hao [2 ,3 ]
机构：
[1] Tianjin Univ Technol, Inst Mat Phys, Tianjin 300384, Peoples R China
[2] Tianjin Univ Technol, Nanomat & Nanotechnol Res Ctr, Tianjin 300191, Peoples R China
[3] Tianjin Key Lab Photo Elect Mat & Devices, Tianjin 300384, Peoples R China
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 02期
关键词：
D O I：
10.1149/1.2817472
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A 505 nm-peaked photoluminescence of Ba3MgSi2O8: Eu2+, Mn2+ phosphor for white-light-emitting diodes originating from an intermediate phase, Ba2SiO4: Eu2+, is found. The corresponding optical properties of this 505 nm-peaked photoluminescence resemble those of Ba2SiO4: Eu2+ well. X-ray diffraction (XRD) results confirm the existence of Ba2SiO4 in the Ba3MgSi2O8. The formation of Ba2SiO4 is ascribed to the phase equilibrium during firing. Addition of flux inhibits the formation of intermediate phases and improves the crystallinity of Ba3MgSi2O8. Specifically, as a proper amount of NH4Cl is added, the 505 nm-peaked photoluminescence disappears and the XRD peaks attributed to Ba2SiO4 disappear as well. (c) 2007 The Electrochemical Society.
引用
收藏
页码：E1 / E4
页数：4
相关论文
共 50 条
  • [1] Crystal Structure of the Ba3MgSi2O8:Mn2+,Eu2+ phosphor for white light emitting diodes
    Aitasalo, T.
    Hietikko, A.
    Holsa, J.
    Lastusaari, M.
    Niittykoski, J.
    Piispanen, T.
    ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 2007, : 461 - 466
  • [2] Full-color Ba3MgSi2O8:Eu2+, Mn2+ phosphors for white-light-emitting diodes
    Kim, JS
    Lim, KT
    Jeong, YS
    Jeon, PE
    Choi, JC
    Park, HL
    SOLID STATE COMMUNICATIONS, 2005, 135 (1-2) : 21 - 24
  • [3] Temperature-dependent emission spectrum of Ba3MgSi2O8: Eu2+, Mn2+ phosphor for white-light-emitting diode
    Kim, JS
    Park, YH
    Choi, JC
    Park, HL
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2005, 8 (08) : H65 - H67
  • [4] Green Light-Emitting Phases Induced by Al Addition in Full-Color Ba3MgSi2O8:Eu2+,Mn2+ Phosphor for White-Light-Emitting Diodes
    Wang, Da-jian
    Liu, Ling-yun
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (05) : H179 - H181
  • [5] Photoluminescence properties of Ba3MgSi2O8:Eu2+ blue phosphor and Ba3MgSi2O8:Eu2+,Mn2+ blue-red phosphor under near-ultraviolet-light excitation
    Umetsu, Yousuke
    Okamoto, Shinji
    Yamamoto, Hajime
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (07) : J193 - J197
  • [6] Green-light-emitting phase in Ba3MgSi2O8:Eu2+, Mn2+ full-color phosphor for white-light-emitting diodes via addition of Si3N4
    Liu, Yan-hua
    Mao, Zhi-yong
    Yu, Wen-hui
    Lu, Qi-fei
    Wang, Da-jian
    JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 493 (1-2) : 406 - 409
  • [7] Structure and Luminescence of Ba3MgSi2O8: Eu2+, Mn2+ Phosphors
    Li, Yue
    He, Dawei
    Wang Yongsheng
    Fu, Ming
    Wu, Yang
    Miao, Feng
    NEW MATERIALS, APPLICATIONS AND PROCESSES, PTS 1-3, 2012, 399-401 : 1016 - 1019
  • [8] GaN-Based white-light-emitting diodes fabricated with a mixture of Ba3MgSi2O8:Eu2+ and Sr2SiO4:Eu2+ phosphors
    Kim, JS
    Kang, JY
    Jeon, PE
    Choi, JC
    Park, HL
    Kim, TW
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (03): : 989 - 992
  • [9] Warm-white-light emitting diode utilizing a single-phase full-color Ba3MgSi2O8:Eu2+, Mn2+ phosphor
    Kim, JS
    Jeon, PE
    Choi, JC
    Park, HL
    Mho, SI
    Kim, GC
    APPLIED PHYSICS LETTERS, 2004, 84 (15) : 2931 - 2933
  • [10] Eu2+, Tb3+, Mn2+ Triactivated Ba3MgSi2O8 Red-Emitting Phosphors for Near Ultraviolet Lighting Emitting Diodes
    Dai, Pengpeng
    Zhang, Xintong
    Zhao, Haihui
    Wang, Xiuli
    Chen, Xi
    Li, Cong
    Lu, Shan
    Liu, Yichun
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (09) : R213 - R217
12345