Applying selective liquid-phase deposition to create contact holes in plasma damage-free process

We apply an alternative plasma damage-free process -- the selective liquid-phase deposition (S-LPD), instead of the conventional RIE to form metal/semiconductor contact holes. This paper studies the performance comparison between S-LPD and RIE to form contact hole in n(+)/p junction diode, Schottky diode, and ohmic contact. In our experiments, if the plasma-free S-LPD technique is adopted, there is excelled performance including lower reverse current, lower ideality factor, higher forward current, high Schottky barrier, lower contact resistance and better thermal stability in these devices.