Initial oxidation features of Si(100) studied by Si2p core-level photoemission spectroscopy

被引:20
|
作者
Oh, JH
Nakamura, K
Ono, K
Oshima, M
Hirashita, N
Niwa, M
Toriumi, A
Kakizaki, A
机构
[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
[2] STARC, Minato Ku, Tokyo 1050004, Japan
[3] High Energy Accelerator Res Org, Inst Mat Struct Sci, Tsukuba, Ibaraki 3050801, Japan
关键词
si2p core level shift; oxygen adsorption; sub-oxide;
D O I
10.1016/S0368-2048(00)00367-4
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
The oxygen adsorption processes during the initial oxidation of Si(100) have been investigated by high-resolution photoemission spectroscopy of the Si2p core levels. The variation of the Si2p intensities was measured in detail for the different sub-oxide (Si1+, Si2+, Si3+, and Si4+) components. The oxygen adsorption processes at room temperature during the initial oxidation were quantitatively analyzed by measuring the intensity ratios of each sub-oxide component as a function of the oxidation time. It is found that the Si1+ and Si2+ species are localized mostly at the first interfacial layer, while the Si3+ and Si4+ components exist in the two-dimensional islands with certain height on the initial oxidation layer, and are expanded horizontally during further oxidation. Our results suggest that the two-dimensional island nucleation occurs during the initial oxidation. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:395 / 399
页数:5
相关论文
empty
未找到相关数据