Silicide formation from laser thermal processing of Ti/Co bilayers

被引：7
|
作者：
Chow, FL [1 ]
Pey, KL
Lee, PS
Tung, CH
Wang, XC
Lim, GC
Chong, YF
机构：
[1] Nanyang Technol Univ, Ctr Microelect, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Sch Mat Engn, Singapore 639798, Singapore
[3] Inst Microelect, Singapore 117685, Singapore
[4] Singapore Inst Mfg Technol, Singapore 638075, Singapore
[5] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2004年 / 7卷 / 10期
关键词：
D O I：
10.1149/1.1788612
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A bilayered CoTi silicide structure consisting of an amorphous CoTi silicide and a highly textured CoTi silicide was found after pulsed excimer laser annealing of titanium/cobalt/silicon stack at high fluence of 0.6 J/cm(2). The highly textured CoTi silicide is monocrystalline and fully coherent with the Si(111) plane of the substrate but has a large amount of microstructural defects. The constitutional supercooling phenomenon is the solidification mechanism responsible for the highly textured CoTi silicide. The incomplete crystallization shown by the presence of the amorphous CoTi silicide is attributed to a high concentration of titanium impurity. (C) 2004 The Electrochemical Society.
引用
收藏
页码：G213 / G215
页数：3
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