High speed semiconductor lasers

被引：0

作者：

Dutta, NK ^{[1
]}

机构：

[1] Univ Connecticut, Dept Phys, Photon Res Ctr, Storrs, CT 06269 USA

来源：

FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS III | 1998年 / 3285卷

关键词：

semiconductor; laser; distributed feedback; InGaAsP; electroabsorption; modulator;

D O I：

10.1117/12.307614

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The fabrication and performance characteristics of high speed semiconductor lasers are described in this paper. These include InGaAsP/InP lasers emitting near 1.55 mu m, InGaAs/GaAs lasers emitting near 1 mu m and integrated electroabsorption modulated lasers emitting near 1.55 mu m.

引用

页码：40 / 50

页数：11

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