Isoindigo-based fluorinated low band gap polymers for environmentally stable field effect transistor

被引:8
|
作者
Jo, Jea Woong [1 ]
Kim, Jong H. [2 ,3 ]
Jung, Jae Woong [4 ]
机构
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul, South Korea
[2] Chungnam Natl Univ, Dept Chem Engn Educ, 99 Daehak Ro, Taejon 305764, South Korea
[3] Chungnam Natl Univ, Grad Sch Energy Sci & Technol, 99 Daehak Ro, Taejon 305764, South Korea
[4] Kyung Hee Univ, Dept Adv Mat Engn Informat & Elect, 1732 Deogyeong Daero, Yongin 446701, Gyeonggi Do, South Korea
基金
新加坡国家研究基金会;
关键词
Isoindigo; Fluorination; Conjugated polymer; Field effect transistor; THIN-FILM TRANSISTORS; ORGANIC SOLAR-CELLS; ELECTRON-ACCEPTORS; SMALL MOLECULES; PERFORMANCE; DIKETOPYRROLOPYRROLE; BENZOTHIADIAZOLE; SEMICONDUCTORS; FULLERENE;
D O I
10.1016/j.dyepig.2016.06.014
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
Two isoindigo-based conjugated polymers, based on fluorinated elctron donor units (dithienyldifluorobenzothiadiazole(DT2FBT) and dithienyltetrafluorobenzene (DT4FBZ)), have been synthesized and their optical, electrochemical, morphological, and crystallinity features were evaluated. The combination of highly conjugated isoindigo moiety with fluorinated electron donor units induces high crystallinity of the derived polymers, resulting in p-type charge transport characteristics with high hole mobility exceeding 7.0 x 10(-2) cm(2) V-1 s(-1). Furthermore, the low-lying energy levels due to the electron-deficient fluorinated electron donors allow not only effective electrical contact with the source/drain electrodes but also excellent ambient stability of the derived transistor devices, enabling the polymers to be promising candidates for the environmentally stable optoelectronics. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:333 / 338
页数:6
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