Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HITiO as gate dielectric

被引：0

作者：

Han, C. Y. ^{[1
]}

Leung, C. H. ^{[1
]}

Lai, P. T. ^{[1
]}

Tang, W. M. ^{[2
]}

Che, C. M. ^{[3
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

[2] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

[3] Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China

来源：

2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2013年

关键词：

OTFT; high k; HjTiO; dielectric;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pentacene organic thin-film transistor (OTFT) with high-K HffiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. After treating the dielectric in the plasma, the carrier mobility of the transistor can be improved by about 5 times to 0.0883 cm(2)/V.s. Moreover, the fluorine plasma treatment can shift the threshold voltage of the device in the positive direction. Experimental results also show that NH3 annealing can enhance the OTFT performance in terms of higher mobility, smaller sub-threshold slope and larger on/off ratio.

引用

页数：2

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