Growth of 3C-SiC films on on-axis 6H-SiC substrates by LPCVD

被引：0
|
作者：
Zheng, Hai-wu [1 ]
Fu, Zhu-xi [1 ]
Lin, Bi-xia [1 ]
Li, Xiao-guang [1 ]
机构：
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Phys, Hefei 230026, Peoples R China
来源：
CHINESE JOURNAL OF CHEMICAL PHYSICS | 2007年 / 20卷 / 03期
关键词：
3C-SiC; on-axis; 6H-SiC; LPCVD; growth mode;
D O I：
10.1088/1674-0068/20/03/305-307
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
Cubic SiC (3C-SiC) films were deposited on on-axis 6H-SiC (0001) substrates by low-pressure chemical vapor deposition (LPCVD). The result of X-ray diffraction patterns shows that the 3C-SiC films were of good crystalline quality. The influence of the growth parameters (flow rates of the gas sources and growth temperature) on the growth rate of the SiC films is discussed. The results show that the transport of silane or its reaction products is the limiting factor for the growth. The surface morphology of the SiC films was observed by atomic force microscope imaging. From these results it can be concluded that the growth of the films is in agreement with a Stranski-Krastanov growth mode.
引用
收藏
页码：305 / 307
页数：3
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