Properties of MBE growth InN:Cr films

被引：0
|
作者：
Chen, P. P. [1 ]
Lu, W. [1 ]
Makino, H. [2 ]
Yao, T. [2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Tohoku Univ, Ctr Interdisciplinary Res, Sendai, Miyagi 980, Japan
来源：
CONFERENCE DIGEST OF THE 2006 JOINT 31ST INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 14TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
InN:Cr films were prepared at Al2O3 substrate by low temperature (300 degrees C) molecular beam epitaxy (mBE). The InN:Cr films show clear ferromagnetic properties up to 350K. The electronic structure of the InN:Cr film has been studied by photoemission spectroscopy.
引用
收藏
页码：487 / 487
页数：1
相关论文
共 50 条
  • [1] Growth of InN by MBE
    Chen, WL
    Gunshor, RL
    Han, J
    Higashimine, K
    Otsuka, N
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5 : art. no. - W3.30
  • [2] Plasma-assisted MBE growth of InN films and InAlN/InN heterostructures
    Higashiwaki, M
    Matsui, T
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 494 - 498
  • [3] MBE-growth, characterization and properties of InN and InGaN
    Nanishi, Y
    Saito, Y
    Yamaguchi, T
    Hori, M
    Matsuda, F
    Araki, T
    Suzuki, A
    Miyajima, T
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 200 (01): : 202 - 208
  • [4] MBE growth and properties of InN and InN-based diluted magnetic semiconductors
    Chen, PP
    Makino, H
    Lu, W
    Yao, T
    FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2004, 5774 : 29 - 33
  • [5] Optical properties of InN films grown by MBE at different conditions
    Chen, PP
    Makino, H
    Wang, JB
    Li, TX
    Lu, W
    Yao, T
    CONFERENCE DIGEST OF THE 2004 JOINT 29TH INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 12TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, 2004, : 431 - 432
  • [6] MBE growth of hexagonal InN films on sapphire with different initial growth stages
    Mamutin, VV
    Vekshin, VA
    Davydov, VY
    Ratnikov, VV
    Shubina, TV
    Ivanov, SV
    Kopev, PS
    Karlsteen, M
    Söderwall, U
    Willander, M
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1999, 176 (01): : 247 - 252
  • [7] MBE growth of hexagonal InN films on sapphire with different initial growth stages
    Mamutin, V.V.
    Vekshin, V.A.
    Davydov, V.Yu.
    Ratnikov, V.V.
    Shubina, T.V.
    Ivanov, S.V.
    Kopev, P.S.
    Karlsteen, M.
    Söderwall, U.
    Willander, M.
    Physica Status Solidi (A) Applied Research, 1999, 176 (01): : 247 - 252
  • [8] Influence of substrate polarity on growth of InN films by RF-MBE
    Matsuda, F
    Saito, Y
    Muramatsu, T
    Yamaguchi, T
    Matsu, Y
    Koukitu, A
    Araki, T
    Nanishi, Y
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2810 - 2813
  • [9] MBE growth optimization of InN nanowires
    Stoica, T
    Meijers, R
    Calarco, R
    Richter, T
    Lüth, H
    JOURNAL OF CRYSTAL GROWTH, 2006, 290 (01) : 241 - 247
  • [10] RF-MBE growth and structural characterization of cubic InN films on GaAs
    Nakamura, T.
    Iida, K.
    Katayama, R.
    Yamamoto, T.
    Onabe, K.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (07): : 1451 - 1455
12345