Organic resistive nonvolatile memory materials

被引:99
|
作者
Lee, Takhee [1 ]
Chen, Yong [2 ,3 ]
机构
[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 151, South Korea
[2] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90024 USA
[3] Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Los Angeles, CA USA
关键词
THIN-FILM; ELECTRICAL BISTABILITY; BISTABLE MEMORY; POLYMER; DEVICES; DIODE; POLY(N-VINYLCARBAZOLE); ELECTROLUMINESCENCE; TRANSISTORS; TRANSITION;
D O I
10.1557/mrs.2012.4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Resistive memory devices based on organic materials that can be configured to two or more stable resistance states have been extensively explored as information storage media due to their advantages, which include simple device structures, low fabrication costs, and flexibility. Various organic-based materials such as small molecules, polymers, and composite materials have been observed to show bistability. This review provides a general summary about the materials, structures, characteristics, and mechanisms of organic resistive memory devices. Several critical strategies for device fabrication, performance enhancement, and integrated circuit architectures are also discussed.
引用
收藏
页码:144 / 149
页数:6
相关论文
共 50 条
  • [1] Organic resistive nonvolatile memory materials
    Takhee Lee
    Yong Chen
    MRS Bulletin, 2012, 37 : 144 - 149
  • [2] Twistable nonvolatile organic resistive memory devices
    Song, Sunghoon
    Jang, Jingon
    Ji, Yongsung
    Park, Sungjun
    Kim, Tae-Wook
    Song, Younggul
    Yoon, Myung-Han
    Ko, Heung Cho
    Jung, Gun-Young
    Lee, Takhee
    ORGANIC ELECTRONICS, 2013, 14 (08) : 2087 - 2092
  • [3] Nonvolatile Memory Concepts Based on Resistive Switching in Inorganic Materials
    Mikolajick, Thomas
    Salinga, Martin
    Kund, Michael
    Kever, Thorsten
    ADVANCED ENGINEERING MATERIALS, 2009, 11 (04) : 235 - 240
  • [4] A nonvolatile organic resistive switching memory based on lotus leaves
    Qi, Yiming
    Sun, Bai
    Fu, Guoqiang
    Li, Tengteng
    Zhu, Shouhui
    Zheng, Liang
    Mao, Shuangsuo
    Kan, Xiang
    Lei, Ming
    Chen, Yuanzheng
    CHEMICAL PHYSICS, 2019, 516 : 168 - 174
  • [5] Nonvolatile memory elements based on organic materials
    Scott, J. Campbell
    Bozano, Luisa D.
    ADVANCED MATERIALS, 2007, 19 (11) : 1452 - 1463
  • [6] Organic nonvolatile resistive memory devices based on thermally deposited Au nanoparticle
    Jin, Zhiwen
    Liu, Guo
    Wang, Jizheng
    AIP ADVANCES, 2013, 3 (05):
  • [7] Nonvolatile resistive memory devices based on Ag
    Jin, Zhiwen
    Liu, Guo
    Wang, Jizheng
    JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (20) : 3282 - 3286
  • [8] Fully Transparent Nonvolatile Resistive Polymer Memory
    Yu, Hwan-Chul
    Kim, Moon Young
    Lee, Jeong-Sup
    Lee, Kwang-Hun
    Baeck, Kyoung Koo
    Kim, Kyoung-Kook
    Cho, Soohaeng
    Chung, Chan-Moon
    JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 2016, 54 (07) : 918 - 925
  • [9] All-nanocellulose nonvolatile resistive memory
    Umberto Celano
    Kazuki Nagashima
    Hirotaka Koga
    Masaya Nogi
    Fuwei Zhuge
    Gang Meng
    Yong He
    Jo De Boeck
    Malgorzata Jurczak
    Wilfried Vandervorst
    Takeshi Yanagida
    NPG Asia Materials, 2016, 8 : e310 - e310
  • [10] All-nanocellulose nonvolatile resistive memory
    Celano, Umberto
    Nagashima, Kazuki
    Koga, Hirotaka
    Nogi, Masaya
    Zhuge, Fuwei
    Meng, Gang
    He, Yong
    De Boeck, Jo
    Jurczak, Malgorzata
    Vandervorst, Wilfried
    Yanagida, Takeshi
    NPG ASIA MATERIALS, 2016, 8 : e310 - e310