SiO2 film formation and electrical properties of InP MIS structures

The purpose of this work is to investigate the influence of the SiO2 film deposition conditions on the charge properties of the Me-SiO(2)n-InP (100) MIS structures. SiO2 films have been formed on n-type InP (100) substrates (N = 10(16)-10(17) cm(-3)) by chemical vapor deposition (CVD) using pyrolysis of tetraethoxysilane (TEOS) in an O-2/N(2)flow at the 300-350 degrees C. The deposition rate was 10-200 nm/h. It is shown that the effective surface state charge Q(SS) and hysteresis of C-V characteristics in the MIS structures to a large extent depend on the SiO2 film deposition rats. In the MIS structures treated in the (NH4)(2)S-x solution the lowest Q(SS) (less than or equal to 10(11) cm(-2)), N-it (similar to 10(11)cm(-2) .eV(-1)) and C-V hysteresis (<0.3 V) were obtained at the d(ox) = 70 nm and the 130 nn/h deposition rate.