Room temperature spin dependent current modulation in an InGaAs-based spin transistor with ferromagnetic contact

被引：0
|
作者：
Yoh, K [1 ]
Ferhat, M [1 ]
Riposan, A [1 ]
Millunchick, JM [1 ]
机构：
[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2005年 / 772卷
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have observed clear current oscillations when the electrodes were magnetized along the channel current at room temperature. The drain current oscillation dependence on gate voltage agreed with the estimation. We believe that this is the first observation of spin transistor operation.
引用
收藏
页码：1315 / 1316
页数：2
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