Self-aligned silicon-germanium base hetero-junction bipolar technology - UHS2

被引：0
|
作者：
Kasahara, T [1 ]
Kakimoto, Y
Fujita, A
Yamaguchi, T
Kato, H
Matsuno, N
机构：
[1] NEC Yamagata Ltd, Yamagata, Japan
[2] NEC Corp Ltd, Cpd Semicond Device Div, Tokyo, Japan
[3] NEC Corp Ltd, Syst Devices & Fundamental Res, Tokyo, Japan
来源：
NEC RESEARCH & DEVELOPMENT | 2001年 / 42卷 / 02期
关键词：
bipolar transistor; SiGe (silicon germanium); heterojunction; graded; low noise; high frequency; self-aligned;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
NEC has developed the UHS2 (Ultra High Speed 2) process using the self-aligned Sice epitaxial base technology. The NPN transistor of 0.3 x 20 mum x 2 emitter has typical characteristics such as current gain h(FE) of 300, collector to emitter breakdown voltage BVceo of 2.7V, cutoff frequency f(T) of 62GHz, and maximum oscillation frequency f(max) of 64GHz. Using this technology, the newly developed NPN transistor 2SC5761 achieved a noise figure NF of 0.9dB at 2GHz.
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收藏
页码：230 / 234
页数：5
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