Reduction in magnetic exchange bias in CoFe/FeMn/CoFe trilayers due to reduced pinned uncompensated moments in AFM layer

被引:9
|
作者
Kulkarni, Prabhanjan D. [1 ,2 ]
Sreevidya, P. V. [1 ,3 ]
Khan, Jakeer [1 ]
Predeep, P. [2 ]
Barshilia, Harish C. [1 ,3 ]
Chowdhury, P. [1 ,3 ]
机构
[1] CSIR, Natl Aerosp Labs, Surface Engn Div, Bangalore 560017, Karnataka, India
[2] Natl Inst Technol, Dept Phys, Lab Mol Elect & Photon LAMP, Calicut 673601, Kerala, India
[3] CSIR, Natl Aerosp Labs Campus, Acad Sci & Innovat Res, Bangalore 560017, Karnataka, India
关键词
Magnetic exchange bias; Pinned uncompensated moments; Bulk antiferromagnet; FM/AFM/FM trilayer; ANISOTROPY; MODEL; FILMS;
D O I
10.1016/j.jmmm.2018.10.026
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The M-H hysteresis curves of field cooled CoFe/FeMn bilayers and CoFe/FeMn/CoFe trilayers were studied to understand the exchange bias phenomena in these systems. The measured data revealed that the values of the exchange bias corresponding to a bottom CoFe layer reduced by about 23.5% with an addition of another CoFe layer at the top of bilayer stack. It was also observed that, while this reduction in exchange bias of a bottom CoFe layer (calculated in %) depends on thicknesses of a top CoFe layer and an antiferromagnetic FeMn layer, it is independent of the thickness of bottom CoFe layer. As the strength of exchange bias depends on the presence of pinned uncompensated moments in an antiferromagnetic layer, our observations indicate that the FeMn layer consists comparatively lower amount of pinned uncompensated moments in trilayers. This reduction in pinned uncompensated moments of FeMn layer in trilayers is then co-related with the domain wall suppression in the FeMn layer in CoFe/FeMn/CoFe trilayers.
引用
收藏
页码:111 / 114
页数:4
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