Comparison of nitrogen and phosphorus implanted, planar, high-voltage 4H-SiC junction rectifiers

被引：4
|
作者：
Chatty, K [1 ]
Khemka, V [1 ]
Chow, TP [1 ]
Gutmann, RJ [1 ]
机构：
[1] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷
关键词：
4H-SiC; diode; junction rectifiers; nitrogen; phosphorus;
D O I：
10.4028/www.scientific.net/MSF.338-342.1331
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High-voltage n(+)/p/p(+) junction rectifiers have been fabricated on 4H-SiC using nitrogen and phosphorus as nt implants. The performance of the devices, fabricated with varying junction termination extension (JTE) species and post-implant anneal temperatures, were compared. Diodes with breakdown voltage as high as 1300V were obtained using a 10 mum epitaxial layer. The best forward forward characteristics were obtained on the phosphorus implanted diodes annealed at 1600 degreesC (forward voltage similar to 5V at 100A/cm(2)). The leakage currents on the phosphorus implanted diodes were slightly higher than the nitrogen implanted diodes (due to damage caused by the heavier phosphorus).
引用
收藏
页码：1331 / 1334
页数：4
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