Investigation of Dark Current Random Telegraph Signal in Pinned Photodiode CMOS Image Sensors

被引：0
|
作者：
Goiffon, Vincent [1 ]
Virmontois, Cedric [1 ]
Magnan, Pierre [1 ]
机构：
[1] Univ Toulouse, ISAE, Image Sensor Res Team, F-31055 Toulouse, France
来源：
2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2011年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The characteristics of Dark Current Random Telegraph Signal (DC-RTS), observed in Pinned PhotoDiode (PPD) CMOS Image Sensors (CIS), are investigated thanks to a dedicated analysis tool. Our results demonstrate, for the first time in PPD CIS, that this DC-RTS is due to meta-stable oxide interface SRH generation centers located in the transfer gate depletion region.
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页数：4
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