Investigation of trapped charge in oxides under Fowler-Nordheim stress using low bias conditions

被引：3
|
作者：
Duane, R
Martin, A
ODonovan, P
Hurley, P
OSullivan, P
Mathewson, A
机构：
[1] Natl. Microlectron. Research Center, Lee Maltings, Cork, Prospect Row
来源：
MICROELECTRONICS AND RELIABILITY | 1996年 / 36卷 / 11-12期
关键词：
D O I：
10.1016/0026-2714(96)85823-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work describes the influence of low current pulses during high current stress on the trapping properties of thin silicon dioxide layers. The determination of the trapped oxide charge during Fowler-Nordheim stress from low current steps is discussed. It is shown that low bias steps are not a reliable indicator of the amount of trapped charge in the oxide due to trapping of additional charges during this measurement period. Copyright (C) 1996 Elsevier Science Ltd
引用
收藏
页码：1623 / 1626
页数：4
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