Several- and many-electron artificial-atoms at filling factors between 2 and 1

被引：15
|
作者：
Austing, G
Tokura, Y
Honda, T
Tarucha, S
Danoesastro, M
Janssen, J
Oosterkamp, T
Kouwenhoven, L
机构：
[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] Delft Univ Technol, Dept Appl Phys, NL-2600 GA Delft, Netherlands
[3] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 1B期
关键词：
single electron transistor; double barrier resonant tunneling structure; quantum dot; quantum Hall effect; maximum density droplet; Coulomb blockade; artificial-atom;
D O I：
10.1143/JJAP.38.372
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We introduce new phenomena that can be studied in an artificial-atom vertical single electron transistor. As we move from the few-electron regime to the several-electron regime, and then the many-electron regime, features in the conductance peaks related to magnetic field induced spin polarization evolve. This allows us to probe the spin-flip region bounded by the lest single-particle crossing at low field, and the eventual formation of a maximum density droplet at high field.
引用
收藏
页码：372 / 375
页数：4
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