Ge thickness effect on the Pd/Ge/Au/Ni/Au ohmic contacts to n-InGaAs

被引：0
|
作者：
Kim, IH
Park, SH
Lee, TW
Park, MP
机构：
[1] Chungju Natl Univ, Dept Mat Sci & Engn, Chungju 380702, Chungbuk, South Korea
[2] Elect & Telecommun Res Inst, Semicond Div, Taejon 305350, South Korea
来源：
MATERIALS LETTERS | 1999年 / 39卷 / 01期
关键词：
ohmic contact; indium gallium arsenide; heterojunction bipolar transistor;
D O I：
10.1016/S0167-577X(98)00211-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of the Ge layer thickness on the Pd/Ge/Au/Ni/Au ohmic contact to n-InGaAs was investigated. The ohmic behavior was related to the variation of constituent phases in the ohmic contact metals-phase transformation. It was found that the formation of PdGe is more helpful than that of Pd2Ge to reduce the specific contact resistance. The AlGaAs/GaAs heterojunction bipolar transistors (HBTs) using the Pd/Ge/An/Ni/Au contact system showed a good RF performance. (C) 1999 Elsevier Science B.V. All rights reserved.
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收藏
页码：33 / 35
页数：3
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