Electrically Controllable: Spin States of. Holes and. Electrons. in Organic Semiconductor Materials

被引:6
|
作者
Iguchi, Shohei [1 ]
Sakurai, Yuki [1 ]
Fujita, Naohiro [1 ]
Osawa, Fumiya [1 ]
Marumoto, Kazuhiro [1 ,2 ]
机构
[1] Univ Tsukuba, Div Mat Sci, Tsukuba, Ibaraki 30S-8573, Japan
[2] Univ Tsukuba, Tsukuba Res Ctr Energy Mat Sci TREMS, Tsukuba, Ibaraki 3058570, Japan
关键词
spin states; holes and electrons; organic semiconductors; ambipolar devices; electron spin resonance spectroscopy; DETECTED MAGNETIC-RESONANCE; FIELD-EFFECT TRANSISTORS; SINGLE-CRYSTAL TRANSISTORS; THIN-FILM TRANSISTORS; GEL GATE DIELECTRICS; HIGH-MOBILITY; CHARGE-TRANSPORT; LOW-VOLTAGE; CONJUGATED POLYMERS; CONDUCTING POLYMERS;
D O I
10.1021/acsaelm.9b00551
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Elucidating hole and electron states in organic semiconductor materials is one of. the important issues for.both"their fundamental science and device appticatipk. Howev6r; the 'detailed charge states, in particular; their spin states, have riot yet been fully elucidated fiom a ri microscopic viewpoint. Here we show electrically controllable spin states of holes and electrons in typical organic semiconductor materials, a polymer regioregular poly(3-hexylthiophene) (RRP3HT) and a small molecule pentacene, using electron spin resonance (ESR) spectroscopy. By use of their ambipolar organic semiconductor devices, these states were revealed as a function of accumulated charge density. The spin states of the electrically accumulated electrons in RRP3HT and pentacene are clarified for the first time. Moreover, the formation of spinless states of electrons in RR-P3HT and holes in pentacene are demonstrated under high charge density, showing a contrast to the spin states under low charge density. This result would be important for further understating hole and electron states in organic semiconductor materials and for improving the performance of organic semiconductor devices from a microscopic viewpoint.
引用
收藏
页码:2522 / 2530
页数:17
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